Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs
Authors: Jose Ortiz Gonzalez, Ruizhu Wu, Saeed Jahdi, Olayiwola Alatise
Extended Abstract:
The future of power conversion at low-to-medium voltages (around 650 V) poses a very interesting debate. At low voltages (below 100 V), the silicon (Si) MOSFET reigns supreme and at the higher end of the …