Posts By: ITeN Editorial Board

Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

Authors: Jose Ortiz Gonzalez, Ruizhu Wu, Saeed Jahdi, Olayiwola Alatise
Extended Abstract:
The future of power conversion at low-to-medium voltages (around 650 V) poses a very interesting debate. At low voltages (below 100 V), the silicon (Si) MOSFET reigns supreme and at the higher end of the …

Impact of High Frequency Switching on Magnetics

Thursday 21 October 2021 at 3:00 PM CET (9:00 AM EST)
By Davide Barater (University of Modena and Reggio Emilia, Italy)

Register now using the link below:

https://attendee.gotowebinar.com/register/6592100391810880267

Abstract:
The fast-switching speed, higher switching frequency of wide-bandgap (SiC, GaN) power devices have provided the opportunities in achieving high-density, higher-efficiency, higher-frequency …

Two Editors-in-Chiefs and two co-Editors-in-Chief of IEEE IES publications announced

During Industrial Electronics Society’s AdCom of 12 and 13 June 2021, the president, Terry Martin, has appointed 2 Editors-in-Chiefs (EiC) and 2 co-Editors-in-Chiefs (co-EiC). The appointment is advised by Publication Committee and validated by AdCom members.
The EiCs, Prof. Emil Levi (reappointment) from United Kingdom for …

Power Routing – A New Paradigm for Maintenance Scheduling

Authors: Marco Liserre, Giampaolo Buticchi, Jose Ignacio Leon, Abraham M. Alcaide, Vivek Raveendran, Youngjong Ko, Markus Andresen, Vito G. Monopoli, Leopoldo Franquelo
Extended Abstract:
Currently, the necessity of efficient and reliable power systems is increasing because of the strict requirements that standards and regulations impose, but still …