Posts By: ITeN Editorial Board

Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

Authors: Jose Ortiz Gonzalez, Ruizhu Wu, Saeed Jahdi, Olayiwola Alatise
Extended Abstract:
The future of power conversion at low-to-medium voltages (around 650 V) poses a very interesting debate. At low voltages (below 100 V), the silicon (Si) MOSFET reigns supreme and at the higher end of the …

Impact of High Frequency Switching on Magnetics

Thursday 21 October 2021 at 3:00 PM CET (9:00 AM EST)
By Davide Barater (University of Modena and Reggio Emilia, Italy)

Register now using the link below:

https://attendee.gotowebinar.com/register/6592100391810880267

Abstract:
The fast-switching speed, higher switching frequency of wide-bandgap (SiC, GaN) power devices have provided the opportunities in achieving high-density, higher-efficiency, higher-frequency …